Used for stability compensation of the feedback loop. Startup/Bias: Initial power-on startup resistor connection.
The 2A155D utilizes DMOS (Double-diffused MOS) technology. This structure allows for the high breakdown voltage ratings characteristic of the component while maintaining reasonable current density. The vertical structure allows the current to flow vertically through the die, maximizing the effective area for current conduction. 2a155d datasheet
While the 2A155D is a robust legacy component, modern alternatives have emerged utilizing SuperJunction technology. Used for stability compensation of the feedback loop
AC-DC converters, adapter power supplies. This structure allows for the high breakdown voltage
The 2A155D is a reliable, high-voltage N-Channel MOSFET suitable for general-purpose switching and power management tasks. Its key strengths lie in its high breakdown voltage and standard packaging. However, design engineers must account for its higher on-resistance by implementing adequate heatsinking and ensuring the gate drive voltage is sufficient to saturate the channel fully. It serves as an excellent component for maintaining or designing robust, low-frequency power electronics.
| Parameter | Symbol | Value | Unit | Notes | | :--- | :--- | :--- | :--- | :--- | | | $V_DSS$ | 1500V (Typ) | V | High voltage capability for offline converters. | | Drain Current | $I_D$ | 2 - 3 | A | Continuous current capability. | | Drain Current (Pulsed) | $I_DM$ | Up to 8 | A | Limited by junction temperature. | | Gate-Source Voltage | $V_GSS$ | $\pm 20$ | V | Gate oxide breakdown limit. | | Power Dissipation | $P_D$ | ~50 | W | At $T_c = 25^\circ C$; requires heatsink. | | Operating Junction Temp | $T_j$ | -55 to +150 | °C | Standard range for silicon devices. |